讲坛题目：Oxides with high dielectric permittivity and their application in integrated electronic

主讲人：DmitriyGolosov副教授

讲座时间：2023年5月8日，14:30-16:30

讲座地点：工7-412

主办单位：研究生院

承办单位：光电工程学院

摘要：

The presentation discusses the problems of scaling modern integrated circuits and the use of silicon oxide in MOS structures. The requirements for materials for use as a gate dielectric of MOSFET transistors are determined. The properties and features of the formation of films of high-k dielectrics based on simple and complex oxides are considered.

个人简介(resume)：

DmitriyGolosov,PhD,associateprofessor,leadingreseacherofPlasmaProcessingResearchCenter,BelarusianStateUniversityofInformaticsandRadioelectronics.